Systematic design approach for AlGaAs/GaAs HBT using two-dimensional device simulator and circuit simulator

被引：0
|
作者：
Honjo, Kazuhiko [1 ]
Madihian, Mohammad [1 ]
Kumashiro, Shigetaka [1 ]
机构：
[1] NEC Corp, Japan
来源：
Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) | 1988年 / 71卷 / 04期
关键词：
Computer Simulation--Applications - Semiconducting Aluminum Compounds - Semiconducting Gallium Arsenide - Transistors--Heterojunctions;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A systematic design method for HBT's is described which is based on a two-dimensional device simulator and a circuit simulator. The validity of this method has been studied by applying it to an AlGaAs/GaAs HBT with a base electrode sandwiched by two emitter electrodes. It is shown that the design accuracy of fT and CBE can be improved if the hot electron effect is introduced in the device simulator. A large signal modeling method is proposed by the circuit simulator SPICE-F′ which is modified so that the collector-emitter offset voltage characteristic to the HBT can be expressed.
引用
收藏
页码：72 / 80
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