Modelling to improve design-based yield

被引:0
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作者
Radojcic, Riko [1 ]
机构
[1] PDF Solutions
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关键词
Application specific integrated circuits - Contamination - Crystal defects - Dies - Mathematical models - Optimization - Oxides - Particle size analysis - Process engineering - Product design - Product development;
D O I
10.1049/ess:20040201
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学科分类号
摘要
The design features have control influence on nature of defects in modern semiconductor processes. The modeling techniques are introduced and applied to new products which are based on readily measurable factors such as product test yield and die area connected through process-constant defect density. The methodology is calibrated for given process technology in which information is based on measurement of probabilities using specific set of test chips known as characterization vehicles. The characterization vehicles are designed to include layout configurations manufactured in target process technology which are tested to quantify various probabilities.
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页码:10 / 14
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