Comparison of nitrogen and phosphorus implanted, planar, high-voltage 4H-SiC junction rectifiers

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作者：
Chatty, K. [1 ]
Khemka, V. [1 ]
Chow, T.P. [1 ]
Gutmann, R.J. [1 ]
机构：
[1] Ctr. Intgd. Electronics E., Rensselaer Polytechnic Institute, Troy, NY 12180-3590, United States
来源：
Materials Science Forum | 2000年 / 338卷
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摘要：
Solid state rectifiers
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