Al-Cu alloy etching using in-reactor aluminium chloride formation in static magnetron triode reactive ion etching

被引:0
|
作者
Sato, Masaaki [1 ]
Arita, Yoshinobu [1 ]
机构
[1] NTT LSI lab, Kanagawa, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:3013 / 3018
相关论文
共 50 条
  • [41] Very Low Pressure Magnetron Reactive Ion Etching of GaN and AlxGa1−xN Using Dichlorofluoromethane (Halocarbon 12)
    P. Batoni
    K. Patel
    C. C. Burkhart
    T. K. Shah
    V. Iyengar
    M. T. Ahrens
    S. T. Morton
    S. M. Bobbio
    E. B. Stokes
    Journal of Electronic Materials, 2007, 36 : 1166 - 1173
  • [42] Deep-submicron trench profile control using a magnetron enhanced reactive ion etching system for shallow trench isolation
    Yeon, CK
    You, HJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1502 - 1508
  • [43] Contact reactive brazing of Al7075 alloy using Cu layer deposited by magnetron sputtering
    Song, X. G.
    Niu, C. N.
    Hu, S. P.
    Liu, D.
    Cao, J.
    Feng, J. C.
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2018, 252 : 469 - 476
  • [44] Formation of silicon nanodot arrays by reactive ion etching using self-assembled tantalum oxide mask
    Park, IH
    Lee, JW
    Chung, CW
    JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2005, 11 (04) : 590 - 593
  • [45] FABRICATION OF NB/AL,ALOX/AL/NB JOSEPHSON TUNNEL-JUNCTIONS USING REACTIVE ION ETCHING IN SF6
    ADELERHOF, DJ
    BIJLSMA, ME
    FRANSEN, PBM
    WEIMAN, T
    FLOKSTRA, J
    ROGALLA, H
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 1993, 209 (04): : 477 - 485
  • [46] REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS AND AL0.3GA0.7AS USING SICL4
    CHEUNG, R
    THOMS, S
    WATT, M
    FOAD, MA
    SOTOMAYORTORRES, CM
    WILKINSON, CDW
    COX, UJ
    COWLEY, RA
    DUNSCOMBE, C
    WILLIAMS, RH
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (09) : 1189 - 1198
  • [47] Ultramicro fabrications on, Fe-Ni alloy films using electron-beam writing and reactive-ion etching
    Nakatani, I
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 5067 - 5067
  • [48] Formation of Fine Holes and Protrusions on Ti-6Al-4V Alloy by Argon-Ion Sputter-Etching
    Nakasa, Keijiro
    Gao, Sande
    Kubo, Takashi
    Kitamika, Yudai
    Sumomogi, Tsunetaka
    JOURNAL OF THE JAPAN INSTITUTE OF METALS AND MATERIALS, 2022, 86 (09) : 181 - 190
  • [49] Formation of broadband antireflective and superhydrophilic subwavelength structures on fused silica using one-step self-masking reactive ion etching
    Ye, Xin
    Jiang, Xiaodong
    Huang, Jin
    Geng, Feng
    Sun, Laixi
    Zu, Xiaotao
    Wu, Weidong
    Zheng, Wanguo
    SCIENTIFIC REPORTS, 2015, 5
  • [50] Simultaneous through-silicon via and large cavity formation using deep reactive ion etching and aluminum etch-stop layer
    Tian, J.
    Bartek, M.
    58TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, PROCEEDINGS, 2008, : 1787 - 1792