0.35μm, 43 μΩcm2, 6 mΩ power MOSFET to power future microprocessor

被引：0
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作者：
Sun, Nick X. [1 ]
Huang, Alex Q. [1 ]
Lee, F.C. [1 ]
机构：
[1] Virginia Polytechnic Inst and State, Univ, Blacksburg, United States
来源：
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) | 1999年
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页码：77 / 80
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