Incorporation of silicon in (311)A and (111)A GaAs grown by molecular beam epitaxy

被引：0
|
作者：
Wagner, J. [1 ]
Ramsteiner, M. [1 ]
Ashwin, M.J. [1 ]
Fahy, M.R. [1 ]
Newman, R.C. [1 ]
Braun, W. [1 ]
Ploog, K. [1 ]
机构：
[1] Fraunhofer-Inst fuer Angewandte, Festkoerperphysik, Freiburg, Germany
来源：
Materials Science Forum | 1994年 / 143-4卷 / pt 1期
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页码：259 / 264
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