Gaseous etching for characterization of structural defects in silicon carbide single crystals

被引：0
|
作者：
Powell, J.A. [1 ]
Larkin, D.J. [1 ]
Trunek, A.J. [1 ]
机构：
[1] NASA Lewis Research Cent, Cleveland, United States
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 1期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：421 / 424
相关论文
共 50 条
  • [21] OBSERVATIONS OF DEFECTS IN SILICON SINGLE CRYSTALS
    ABE, T
    MARUYAMA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) : 979 - &
  • [22] LAMELLAR DEFECTS IN SINGLE CRYSTALS OF SILICON
    FRANKS, J
    GEACH, GA
    CHURCHMAN, AT
    PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (02): : 111 - &
  • [23] Polytype formation in silicon carbide single crystals
    Li, Xiang-Biao
    Shi, Er-Wei
    Chen, Zhi-Zhan
    Xiao, Bing
    DIAMOND AND RELATED MATERIALS, 2007, 16 (03) : 654 - 657
  • [24] Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching
    Henkel, T
    Ferro, G
    Nishizawa, S
    Pressler, H
    Tanaka, Y
    Tanoue, H
    Kobayashi, N
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 481 - 484
  • [25] Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching
    Henkel, T.
    Ferro, G.
    Nishizawa, S.
    Pressler, H.
    Tanaka, Y.
    Tanoue, H.
    Kobayashi, N.
    Materials Science Forum, 2000, 338
  • [26] EFFECT OF IMPURITIES AND INHERENT DEFECTS ON THE PHYSICOMECHANICAL PROPERTIES OF SILICON-CARBIDE SINGLE-CRYSTALS
    GARSHIN, AP
    LAVRENOVA, EA
    VODAKOV, YA
    MOKHOV, EN
    FIZIKA TVERDOGO TELA, 1992, 34 (09): : 2748 - 2752
  • [27] INFLUENCE OF NITROGEN ON FORMATION OF STRUCTURAL DISTORTIONS IN SILICON-CARBIDE SINGLE-CRYSTALS
    TAIROV, YM
    KHLEBNIKOV, II
    TSVETKOV, VF
    CHERNOV, MA
    KRISTALLOGRAFIYA, 1976, 21 (02): : 425 - 426
  • [28] Structural defects and deep acceptors in silicon carbide.
    Lebedev, AA
    CAS'98 PROCEEDINGS - 1998 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 21ST EDITION, VOLS 1 AND 2, 1998, : 267 - 270
  • [29] Nanostructures in lightly doped silicon carbide crystals with polytypic defects
    Vlaskina, S. I.
    Mishinova, G. N.
    Vlaskin, L. V.
    Rodionov, V. E.
    Svechnikov, G. S.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2014, 17 (02) : 155 - 159
  • [30] Structural defects in germanium single crystals
    Kaplunov, I. A.
    Shelopaev, A. V.
    Kolesnikov, A. I.
    JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2010, 4 (06) : 994 - 997
12345