Gaseous etching for characterization of structural defects in silicon carbide single crystals

被引：0
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作者：
Powell, J.A. [1 ]
Larkin, D.J. [1 ]
Trunek, A.J. [1 ]
机构：
[1] NASA Lewis Research Cent, Cleveland, United States
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 1期
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页码：421 / 424
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