Real-time growth monitoring of InGaAs/InP-HBT structures with reflectance anisotropy spectroscopy

被引：0
|
作者：
Arens, M. [1 ]
Kurpas, P. [1 ]
Ressel, P. [1 ]
Weyers, M. [1 ]
机构：
[1] Sentech Instruments GmbH, Berlin, Germany
来源：
Thin Solid Films | 1998年 / 313-314卷 / 1-2期
关键词：
We are thankful to O. Fink for his expert technical assistance in MOVPE growth. The authors gratefully acknowledge the support of the Bundesministerium für Bildung; Wissenschaft; Forschung und Technologie (BMBF) under contract 01 BT 310;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
17
引用
收藏
页码：609 / 613
相关论文
共 50 条
  • [31] Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication
    Kurpas, P
    Rumberg, A
    Weyers, M
    Knorr, K
    Bergunde, T
    Sato, M
    Richter, W
    JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 203 - 207
  • [32] REFLECTANCE-DIFFERENCE SPECTROSCOPY SYSTEM FOR REAL-TIME MEASUREMENTS OF CRYSTAL-GROWTH
    ASPNES, DE
    HARBISON, JP
    STUDNA, AA
    FLOREZ, LT
    APPLIED PHYSICS LETTERS, 1988, 52 (12) : 957 - 959
  • [33] REAL-TIME MONITORING OF THERMAL DAMAGE IN EX VIVO TISSUES USING DIFFUSE REFLECTANCE SPECTROSCOPY
    Nagarajan, Vivek Krishna
    Yu, Bing
    LASERS IN SURGERY AND MEDICINE, 2015, 47 : 12 - 12
  • [34] InP HBT chipset, enabling high-bandwidth, real-time oscilloscope architecture
    Rehorn, Chris
    Microwave Journal, 2010, 53 (9 SPEC. SUPPL.) : 46 - 56
  • [35] InP HBT Chipset, Enabling High-bandwidth, Real-time Oscilloscope Architecture
    Rehorn, Chris
    MICROWAVE JOURNAL, 2010, : 46 - +
  • [36] Real-time fouling monitoring with Raman spectroscopy
    Virtanen, Tiina
    Reinikainen, Satu-Pia
    Koegler, Martin
    Manttari, Mika
    Viitala, Tapani
    Kallioinen, Mari
    JOURNAL OF MEMBRANE SCIENCE, 2017, 525 : 312 - 319
  • [37] Real-time monitoring of PEGylation by NMR spectroscopy
    Luo, Ying
    Zhang, Roujian
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2005, 230 : U581 - U581
  • [38] Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth
    Lastras-Martinez, A.
    Ortega-Gallegos, J.
    Guevara-Macias, L. E.
    Nunez-Olvera, O.
    Balderas-Navarro, R. E.
    Lastras-Martinez, L. F.
    Lastras-Montano, L. A.
    Lastras-Montano, M. A.
    APL MATERIALS, 2014, 2 (03):
  • [39] Growth monitoring of GaInP/GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopy
    Ferdinand-Braun-Inst fuer, Hoechstfrequenztechnik, Berlin, Germany
    J Cryst Growth, 1-4 (217-222):
  • [40] Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001)
    Armenta-Franco, A.
    Lastras-Martinez, A.
    Ortega-Gallegos, J.
    Ariza-Flores, D.
    Guevara-Macias, L. E.
    Balderas-Navarro, R. E.
    Lastras-Martinez, L. F.
    APPLIED SURFACE SCIENCE, 2017, 421 : 608 - 610
12345