Real-time growth monitoring of InGaAs/InP-HBT structures with reflectance anisotropy spectroscopy

被引:0
|
作者
Arens, M. [1 ]
Kurpas, P. [1 ]
Ressel, P. [1 ]
Weyers, M. [1 ]
机构
[1] Sentech Instruments GmbH, Berlin, Germany
来源
Thin Solid Films | 1998年 / 313-314卷 / 1-2期
关键词
We are thankful to O. Fink for his expert technical assistance in MOVPE growth. The authors gratefully acknowledge the support of the Bundesministerium für Bildung; Wissenschaft; Forschung und Technologie (BMBF) under contract 01 BT 310;
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摘要
17
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页码:609 / 613
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