Galvanomagnetic effects in germanium-doped indium antimonide under deep irradiation with fast electrons

被引：0

|

作者：

Brandt, N.B.

Skipetrov, E.P.

Dmitriev, V.V.

Kol'tsov, G.I.

Ladygin, E.A.

机构：

来源：

Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizika) | 1988年 / 43卷 / 06期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

11

引用

收藏

页码：113 / 116

相关论文

共 50 条

[31] DEFECTS FORMED IN GOLD-DOPED GERMANIUM BY IRRADIATION WITH FAST ELECTRONS AT 77-DEGREES-K
ALANIYA, NM
GERASIMOV, AB
KASPARYAN, KI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (06): : 637 - 640
[32] DEFECTS FORMED IN GOLD-DOPED GERMANIUM BY IRRADIATION WITH FAST ELECTRONS AT 77 degree K.
Alaniya, N.M.
Gerasimov, A.B.
Kasparyan, K.I.
Soviet physics. Semiconductors, 1980, 14 (06): : 637 - 640
[33] HYDROXYL DEFECTS IN GERMANIUM-DOPED QUARTZ - DEFECT DYNAMICS AND RADIATION EFFECTS
BAHADUR, H
PHYSICAL REVIEW B, 1995, 52 (10): : 7065 - 7075
[34] GERMANIUM-DOPED AND SILICON-DOPED INDIUM-OXIDE THIN-FILMS PREPARED BY RADIOFREQUENCY MAGNETRON SPUTTERING
MARUYAMA, T
TAGO, T
APPLIED PHYSICS LETTERS, 1994, 64 (11) : 1395 - 1397
[35] THE EFFECT OF FAST NEUTRON IRRADIATION ON THE RECOMBINATION OF ELECTRONS AND HOLES IN GERMANIUM CRYSTALS
VAVILOV, VS
SPITSYN, AV
SMIRNOV, LS
CHUKICHEV, MV
SOVIET PHYSICS JETP-USSR, 1957, 5 (04): : 579 - 582
[36] KINETICS OF CHANGES IN THE CARRIER DENSITY IN INDIUM-ANTIMONIDE DUE TO IRRADIATION WITH 50-MEV ELECTRONS
VITOVSKII, NA
MASHOVETS, TV
OGANESYAN, OV
PAMBUKHCHYAN, NK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1106 - 1107
[37] PHOTOCONDUCTIVITY SPECTRA OF GERMANIUM CRYSTALS DOPED WITH OXYGEN AND IRRADIATED WITH FAST ELECTRONS
AKIMCHEN.IP
VAVILOV, VS
PLOTNIKO.AF
SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (07): : 1577 - +
[38] INFLUENCE OF ELECTRON-IRRADIATION ON PHYSICAL-PROPERTIES OF GERMANIUM-DOPED SILICON SINGLE-CRYSTALS
DASHEVSKII, MY
KORLYAKOV, DN
LADYGIN, EA
MUSALITIN, AM
SHILIN, BA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (12): : 1289 - 1292
[39] INFLUENCE OF PRESSURE ON ELECTROPHYSICAL PROPERTIES OF PARA-TYPE INDIUM-ANTIMONIDE IRRADIATED WITH FAST ELECTRONS
BRANDT, NB
DMITRIEV, VV
LADYGIN, EA
SKIPETROV, EP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (03): : 315 - 319
[40] Effects of time-temperature profiles on glow curves of germanium-doped optical fibre
Lam, S. E.
Alawiah, A.
Bradley, D. A.
Noor, N. Mohd
RADIATION PHYSICS AND CHEMISTRY, 2017, 137 : 56 - 61

← 1 2 3 4 5 →