Different hydrogen passivation mechanisms between low-temperature and high-temperature poly-Si TFT's

被引：0
|
作者：
Kim, Yong-Sang [1 ]
Choi, Kwon-Young [1 ]
Han, Min-Koo [1 ]
机构：
[1] Seoul Natl Univ, Seoul, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 2 B期
关键词：
Thin film transistors;
D O I：
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学科分类号：
摘要：
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页码：719 / 721
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