QUANTITATIVE EMISSION SPECTROGRAPHIC DETERMINATION OF Ge IN MCVD DEPOSITS.

The undesirable refractive index variation occuring in the modified chemical vapor deposition (MCVD) process is investigated. An emission spectrographic technique for quantitative determination of GeO//2 in silicate glass deposits has been developed. The GeO//2 concentrations in unconsolidated MCVD deposits were measured for various distances downstream from the hot zone. The results show that Ge is incompletely oxidized and that a maximum occurs in the incorporation of Ge at temperatures near 1850 K with smaller concentrations in the deposits at both lower and higher temperatures.