Measurement of glass-bonded GaAs/GaAlAs photocathode by X-ray double crystal diffractometry

被引：0
|
作者：
Yan, Jinliang
Xiang, Shiming
机构：
来源：
Hongwai Jishu/Infrared Technology | / 20卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：33 / 37
相关论文
共 50 条
  • [31] Structural characterization of quantum-well layers by double-crystal X-ray diffractometry
    A. M. Afanas’ev
    R. M. Imamov
    Crystallography Reports, 2003, 48 : 728 - 743
  • [32] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS
    BARTELS, WJ
    NIJMAN, W
    JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) : 518 - 525
  • [33] USE OF SCINTILLATION COUNTERS IN SINGLE CRYSTAL X-RAY DIFFRACTOMETRY
    BLACK, PJ
    FORSYTH, JB
    JOURNAL OF SCIENTIFIC INSTRUMENTS, 1959, 36 (09): : 392 - 394
  • [34] Crystallinity and crystallization mechanism of lithium aluminosilicate glass by X-ray diffractometry
    Guo Xing-zhong
    Yang Hui
    Cao Ming
    Han Chen
    Song Fang-fang
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2006, 16 (03) : 593 - 597
  • [35] Crystallinity and crystallization mechanism of lithium aluminosilicate glass by X-ray diffractometry
    郭兴忠
    杨辉
    曹明
    韩陈
    宋芳芳
    Transactions of Nonferrous Metals Society of China, 2006, (03) : 593 - 597
  • [36] INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION
    LI, CR
    MAI, ZH
    CUI, SF
    ZHOU, JM
    WANG, YT
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (08) : 4172 - 4175
  • [37] X-ray double crystal diffractian study of InGaAs/GaAs quantum wells
    Yan, Y
    Xue, CY
    Zhang, BZ
    Zhang, WD
    ISTM/2005: 6th International Symposium on Test and Measurement, Vols 1-9, Conference Proceedings, 2005, : 2271 - 2273
  • [38] Characterisation of InGaAs/GaAs superlattice structures by X-ray double crystal diffraction
    Shrivastava, M.C.
    Swaminathan, S.
    Microelectronics Journal, 1988, 19 (05) : 29 - 33
  • [39] NONUNIFORMITY OF GAAS WAFERS REVEALED BY AN X-RAY DOUBLE-CRYSTAL METHOD
    FUKUMORI, T
    FUTAGAMI, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 113 (01): : K19 - K21
  • [40] Measurement of aluminum concentration in epitaxial films of AlxGa1-xAs on (110)- and (111)-oriented GaAs by double axis x-ray diffractometry
    1600, (74):
12345