Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation

被引：0
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作者：
Lai, Chao Sung [1 ]
Chao, Tien Sheng [1 ]
Lei, Tan Fu [1 ]
Lee, Chung Len [1 ]
Huang, Tiao Yuan [1 ]
Chang, Chun Yen [1 ]
机构：
[1] Chang Gung Univ, Tao-Yuan, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1998年 / 37卷 / 10期
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页码：5507 / 5509
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