CRITICAL COMPARISON OF SILICIDE FILM DEPOSITION TECHNIQUES.

被引：0

作者：

Ahn, K.Y. ^{[1
]}

Basavaiah, S. ^{[1
]}

机构：

[1] IBM, Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, Thomas J. Watson Research Cent, Yorktown Heights, NY, USA

来源：

| 1600年 / 118期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

TUNGSTEN COMPOUNDS

引用

共 50 条

[41] Comparison of polyvinylsiloxane impressions using unique and double techniques.
Lopes, LC
Benotti, DG
Santos, FAM
Shiu, P
Eduardo, CP
JOURNAL OF DENTAL RESEARCH, 1998, 77 (05) : 1150 - 1150
[42] A comparison of shaping ability among four instrumentation techniques.
Wei, X
Cheung, GSP
JOURNAL OF DENTAL RESEARCH, 2000, 79 (05) : 1321 - 1321
[43] Arch length analysis: A comparison of four different techniques.
Estandiari, S
Abrahamian, A
JOURNAL OF DENTAL RESEARCH, 1997, 76 : 1892 - 1892
[44] MODELING OF MICROLITHOGRAPHIC PROCESSES: COMPARISON OF CONTRAST ENHANCEMENT TECHNIQUES.
Meyerhofer, Dietrich
Journal of imaging science, 1986, 30 (04): : 155 - 159
[45] Comparison of the plaque removal capacity of two brushing techniques.
Cachapuz, MF
Oppermann, RV
JOURNAL OF DENTAL RESEARCH, 2001, 80 (04) : 1060 - 1060
[46] ANALYSIS OF STRESS IN CHEMICAL VAPOR-DEPOSITION TUNGSTEN SILICIDE FILM
SHIOYA, Y
ITOH, T
INOUE, SI
MAEDA, M
JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4194 - 4199
[47] ELECTRICAL PROPERTIES OF GaAs SCHOTTKY CONTACTS FABRICATED BY VARIOUS DEPOSITION TECHNIQUES.
Iwami, Yoshio
Morita, Yoshihiko
Okumura, Tsugunori
Memoirs of Faculty of Technology, Tokyo Metropolitan University, 1987, (37): : 3831 - 3841
[48] PROPERTIES OF MOLYBDENUM SILICIDE FILM DEPOSITED BY CHEMICAL VAPOR-DEPOSITION
INOUE, S
TOYOKURA, N
NAKAMURA, T
MAEDA, M
TAKAGI, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1603 - 1607
[49] INNOGRAPH TECHNIQUES.
Erdosi, Gy.
1600, Budapest University of Technology and Economics, Budafoki ut 4, Budapest, H-1111, Hungary (30): : 3 - 4
[50] PILING TECHNIQUES.
West, A.S
Highways, 1981, 49 (1855): : 8 - 25

← 1 2 3 4 5 →