Improvement of optical properties of multilayer quantum dots self-formed in GaP/InP short-period superlattices on GaAs(311)A

被引：0
|
作者：
Watanabe, Daisuke [1 ]
Asahi, Hajime [1 ]
Noh, Joo-Hyong [1 ]
Fudeta, Mayuko [1 ]
Mori, Jun [2 ]
Matsuda, Satoru [1 ]
Asami, Kumiko [1 ]
Gonda, Shun-Ichi [1 ]
机构：
[1] Inst. of Sci. and Indust. Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
[2] School of Science, Kwansei-Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 7 B期
关键词：
Gallium phosphide - Indium aluminum phosphide - Indium gallium phosphide - Multilayer quantum dots;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：4601 / 4603
相关论文
共 50 条
  • [41] Short-Period GaMnAs/GaAs Superlattices: Optical and Magnetic Characterization
    W. Szuszkiewicz
    E. Dynowska
    F. Ott
    B. Hennion
    M. Jouanne
    J. F. Morhange
    J. Sadowski
    Journal of Superconductivity, 2003, 16 : 209 - 212
  • [42] GaAs-InAs short-period superlattice/InP(411)A self-formed quantum dot light emitting diodes with 1.3-1.5 μm light emission
    Shimada, T
    Mori, J
    Hasegawa, S
    Asahi, H
    2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2004, : 104 - 107
  • [43] OPTICAL, VIBRATIONAL AND ELECTRONIC-PROPERTIES OF SHORT-PERIOD GAAS-AIAS SUPERLATTICES
    MOORE, KJ
    DUGGAN, G
    DAWSON, P
    FOXON, CT
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (04) : 481 - 485
  • [44] OPTICAL-PROPERTIES OF ORDERED AND RANDOMLY DISORDERED ALAS/GAAS SHORT-PERIOD SUPERLATTICES
    ARENT, DJ
    ALONSO, RG
    HORNER, GS
    LEVI, D
    BODE, M
    MASCARENHAS, A
    OLSON, JM
    YIN, X
    DELONG, MC
    SPRINGTHORPE, AJ
    MAJEED, A
    MOWBRAY, DJ
    SKOLNICK, MS
    PHYSICAL REVIEW B, 1994, 49 (16): : 11173 - 11184
  • [45] OPTICAL-PROPERTIES AND BAND-STRUCTURE OF SHORT-PERIOD GAAS/ALAS SUPERLATTICES
    FINKMAN, E
    STURGE, MD
    MEYNADIER, MH
    NAHORY, RE
    TAMARGO, MC
    HWANG, DM
    CHANG, CC
    JOURNAL OF LUMINESCENCE, 1987, 39 (02) : 57 - 74
  • [46] ELECTRONIC-STRUCTURES AND OPTICAL-PROPERTIES OF SHORT-PERIOD GAAS/ALAS SUPERLATTICES
    XIA, JB
    CHANG, YC
    PHYSICAL REVIEW B, 1990, 42 (03): : 1781 - 1790
  • [47] Growth and optical properties of strained (AlP)(n)(GaP)(n) short-period superlattices
    Shiraishi, K
    Kitamura, J
    Hara, K
    Munekata, H
    Kukimoto, H
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (12) : 1801 - 1805
  • [48] OPTICAL EVIDENCE OF THE DIRECT-TO-INDIRECT-GAP TRANSITION IN GAAS-ALAS SHORT-PERIOD SUPERLATTICES
    DANAN, G
    ETIENNE, B
    MOLLOT, F
    PLANEL, R
    JEANLOUIS, AM
    ALEXANDRE, F
    JUSSERAND, B
    LEROUX, G
    MARZIN, JY
    SAVARY, H
    SERMAGE, B
    PHYSICAL REVIEW B, 1987, 35 (12): : 6207 - 6212
  • [49] Growth and optical evaluation of InGaAs/GaAs quantum dots self-formed during alternate supply of precursors
    Mukai, K
    Ohtsuka, N
    Shoji, H
    Sugawara, M
    APPLIED SURFACE SCIENCE, 1997, 112 : 102 - 109
  • [50] Improvement of self-organized quantum wire structures formed in (GaP)(n)(InP)(m) superlattices by the growth on GaAs(011) substrate
    Kim, SJ
    Asahi, H
    Takemoto, M
    Asami, K
    Gonda, S
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 99 - 102
12345