GATE STRUCTURE FOR MIDGAP GATE CMOS.

被引：0
|
作者：
Anon
机构：
来源：
| 1600年 / 29期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTOR DEVICES, MOS
引用
收藏
相关论文
共 50 条
  • [31] Thermodynamics of Computation for CMOS NAND Gate
    Yoshino, Daigo
    Tokura, Yasuhiro
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2023, 92 (12)
  • [32] FAULT MODELS OF CMOS TRANSMISSION GATE
    MILOVANOVIC, DP
    LITOVSKI, VB
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1991, 71 (04) : 675 - 683
  • [33] THE EFFECT OF GATE OXIDE THICKNESS ON THE RADIATION HARDNESS OF SILICON-GATE CMOS
    NORDSTROM, TV
    GIBBON, CF
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4349 - 4353
  • [34] An Integrated SiC CMOS Gate Driver
    Barlow, Matthew
    Ahmed, Shamim
    Mantooth, H. Alan
    Francis, A. Matt
    APEC 2016 31ST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, 2016, : 1646 - 1649
  • [35] Gate dielectric degradation in CMOS inverters
    Martin-Martinez, J.
    Gerardin, S.
    Rodriguez, R.
    Nafria, M.
    Aymerich, X.
    Paccagnella, A.
    Ghidini, G.
    MICROELECTRONIC ENGINEERING, 2009, 86 (10) : 2123 - 2126
  • [36] A RADIATION-HARDENED 10K-GATE CMOS GATE ARRAY
    HATANO, H
    YOSHII, I
    SHIBUYA, M
    TAKATUKA, S
    SHINOHARA, T
    NOGUCHI, T
    YAMAMOTO, K
    FUJI, H
    ABE, R
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) : 2435 - 2438
  • [37] 0.25 μm CMOS gate array
    Sawada, Hirotoshi
    Ino, Masayuki
    Takeya, Ken
    Sakai, Tetsushi
    NTT R and D, 1997, 46 (04): : 347 - 354
  • [38] CMOS gate oxide defects induced by pre-gate plasma process
    Carrere, J-P.
    Garnier, P.
    Desvoivres, L.
    Berthoud, A.
    Lunenborg, M.
    MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2109 - 2112
  • [39] Dual-metal gate CMOS with HfO2 gate dielectric
    Samavedam, SB
    La, LB
    Smith, J
    Dakshina-Murthy, S
    Luckowski, E
    Schaeffer, J
    Zavala, M
    Martin, R
    Dhandapani, V
    Triyoso, D
    Tseng, HH
    Tobin, PJ
    Gilmer, DC
    Hobbs, C
    Taylor, WJ
    Grant, JM
    Hegde, RI
    Mogab, J
    Thomas, C
    Abramowitz, P
    Moosa, M
    Conner, J
    Jiang, J
    Arunachalam, V
    Sadd, M
    Nguyen, BY
    White, B
    INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 433 - 436
  • [40] PROCESSORS MOVE TOWARDS CMOS.
    Hughes, Steve
    New Electronics, 1984, 17 (05):
12345