Position spectroscopy of native defects in GaAs

被引：0
|
作者：
Hautojaervi, P.
Saarinen, K.
Corbel, C.
机构：
来源：
Physica Scripta T | 1993年 / T49A卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Native point defects in non-stoichiometric GaAs doped with beryllium
    Gebauer, J
    Zhao, R
    Specht, P
    Börner, F
    Redmann, F
    Krause-Rehberg, R
    Weber, ER
    PHYSICA B-CONDENSED MATTER, 2001, 308 : 812 - 815
  • [22] THE STUDY OF NATIVE DEFECTS IN AS-GROWN GAAS BY POSITRON-ANNIHILATION
    FUJII, S
    UEDONO, A
    TANIGAWA, S
    HYPERFINE INTERACTIONS, 1993, 79 (1-4): : 719 - 723
  • [23] Optical and electrical spectroscopy of defects in low temperature grown GaAs
    Steen, C
    Kiesel, P
    Tautz, S
    Krämer, S
    Soubatch, S
    Malzer, S
    Döhler, GH
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 88 (2-3): : 191 - 194
  • [24] Control of Al(2)O(3) Position in Anodic GaAs Native Oxide
    Pringle, J. P. S.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (12) : 1952 - 1953
  • [25] Annealing characteristics of native defects in low-temperature-grown MBE GaAs
    Darmo, J
    Dubecky, F
    Kordos, P
    Forster, A
    SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 67 - 70
  • [26] First Principles Study on Optical Properties of GaAs Saturable Absorbers with Native Defects
    Cong, Wen
    Li, Dechun
    Zhao, Shengzhi
    Li, Guiqiu
    Yang, Kejian
    INTERNATIONAL SYMPOSIUM ON OPTOELECTRONIC TECHNOLOGY AND APPLICATION 2014: DEVELOPMENT AND APPLICATION OF HIGH POWER LASERS, 2014, 9294
  • [27] Charged native point defects in GaAs and other III-V compounds
    Hurle, DTJ
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 1621 - 1627
  • [28] POSITRON-ANNIHILATION SPECTROSCOPY OF NATIVE VACANCIES IN AS-GROWN GAAS
    CORBEL, C
    STUCKY, M
    HAUTOJARVI, P
    SAARINEN, K
    MOSER, P
    PHYSICAL REVIEW B, 1988, 38 (12): : 8192 - 8208
  • [29] OBSERVATION OF BULK DEFECTS BY SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY - ARSENIC ANTISITE DEFECTS IN GAAS
    FEENSTRA, RM
    WOODALL, JM
    PETTIT, GD
    PHYSICAL REVIEW LETTERS, 1993, 71 (08) : 1176 - 1179
  • [30] Defects in electron-irradiated GaAs studied by positron lifetime spectroscopy
    Polity, A
    Rudolf, F
    Nagel, C
    Eichler, S
    KrauseRehberg, R
    PHYSICAL REVIEW B, 1997, 55 (16): : 10467 - 10479
12345