Highly resolved maskless patterning on InP by focused ion beam enhanced wet chemical etching

被引：0
|
作者：
König, Harald [1 ]
Reithmaier, Johann Peter [1 ]
Forchel, Alfred [1 ]
机构：
[1] Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 10期
关键词：
Etching - Ion beams - Ion implantation - Lithography - Substrates;
D O I：
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中图分类号：
学科分类号：
摘要：
引用
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页码：6142 / 6144
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