ELECTRON MOBILITY IN N-TYPE AND INTRINSIC MERCURY TELLURIDE

被引：0
|
作者：
IVANOV-OMSKII VI
KOLOMIETS BT
OGORODNIKOV VK
SMEKALOVA KP
机构：
来源：
| 1970年 / 4卷 / 02期
关键词：
ELECTRICAL PROPERTIES - ELECTRON MOBILITY - ELECTRONS; SCATTERING - MERCURY COMPOUNDS - SEMICONDUCTORS - SPSEA - TELLURIUM COMPOUNDS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Temperature dependences of electrical conductivity and Hall coefficients in n-type HgTe were determined for a temperature range between 1. 7 to 300 K. Electron scattering mechanisms were ascribed to scattering by charged centers and optical phonons and the exceptionally high electron mobilities at low temperatures were attributed to an additional screening of the charged centers by valence electrons.
引用
收藏
页码：214 / 218
相关论文
共 50 条
  • [21] ELECTRON MOBILITY IN STRONGLY COMPENSATED N-TYPE InSb.
    Litvak-Gorskaya, L.B.
    Shapiro, E.Z.
    Soviet physics. Semiconductors, 1983, 17 (11): : 1258 - 1261
  • [22] CYCLOTRON ABSORPTION IN N-TYPE LEAD TELLURIDE
    FUJIMOTO, M
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1967, 15 (3-4): : 137 - &
  • [23] GALVANOMAGNETIC EFFECTS IN N-TYPE BISMUTH TELLURIDE
    DRABBLE, JR
    GROVES, RD
    WOLFE, R
    PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459): : 430 - 443
  • [24] CYCLOTRON ABSORPTION IN N-TYPE LEAD TELLURIDE
    FUJIMOTO, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (09) : 1706 - &
  • [25] EFFECT OF ELECTRON-ELECTRON COLLISIONS ON MOBILITY OF WARM ELECTRONS IN N-TYPE GE AND N-TYPE SI AT 78 DEGREES K
    DAVYDOV, AB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (10): : 1239 - +
  • [26] Quantum transport in n-type and p-type modulation-doped mercury telluride quantum wells
    Landwehr, G
    Gerschütz, J
    Oehling, S
    Pfeuffer-Jeschke, A
    Latussek, V
    Becker, CR
    PHYSICA E, 2000, 6 (1-4): : 713 - 717
  • [27] Theory of the electron mobility in n-type 6H-SiC
    Kinoshita, T
    Itoh, KM
    Schadt, M
    Pensl, G
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) : 8193 - 8198
  • [28] ELECTRON-MOBILITY OF N-TYPE THIN-FILM INSB
    BABU, TKM
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1976, 14 (04) : 316 - 317
  • [29] THEORY OF SCREENING AND ELECTRON-MOBILITY - APPLICATION TO N-TYPE SILICON
    SANBORN, BA
    ALLEN, PB
    MAHAN, GD
    PHYSICAL REVIEW B, 1992, 46 (23): : 15123 - 15134
  • [30] ELECTRON-MOBILITY AND THERMOELECTRIC-POWER IN PURE MERCURY TELLURIDE
    WALUKIEWICZ, W
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (10): : 1945 - 1954
12345