Electron beam lithography process for T- and Γ-shaped gate fabrication using chemically amplified DUV resists and PMMA

被引：0
|
作者：
Chen, Y.
Macintyre, D.
Thoms, S.
机构：
来源：
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | / 17卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2507 / 2511
相关论文
共 50 条
  • [21] Use of positive and negative chemically amplified resists in electron-beam direct-write lithography
    Tritchkov, A
    Jonckheere, R
    VandenHove, L
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2986 - 2993
  • [22] Universal approach for process optimization of chemically amplified photoresists in electron beam lithography
    Greul, Markus
    Shoshi, Astrit
    Klikovits, Jan
    Martens, Stephan
    Hofmann, Ulrich
    Barahona, Olga
    Shnirman, Benyamin
    Starz, Leon
    Wintrich, Patrick
    Sailer, Holger
    JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3, 2024, 23 (02):
  • [23] Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process
    Michel, S
    Lavallée, E
    Beauvais, J
    Mouine, J
    ELECTRONICS LETTERS, 1999, 35 (15) : 1283 - 1284
  • [24] Probabilistic gel formation theory in negative tone chemically amplified resists used in optical and electron beam lithography
    Patsis, GP
    Glezos, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04): : 1303 - 1310
  • [25] Point spread function for the calculation of acid distribution in chemically amplified resists used for electron-beam lithography
    Kozawa, Takahiro
    Tagawa, Seiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (45-49): : L1200 - L1202
  • [26] Resolution blur of latent acid image and acid generation efficiency of chemically amplified resists for electron beam lithography
    Kozawa, T
    Tagawa, S
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (05)
  • [27] Theoretical study on protected unit fluctuation of chemically amplified resists used for photomask production by electron beam lithography
    Kozawa, Takahiro
    Tamura, Takao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (01)
  • [28] Chemically amplified molecular resists based on noria derivatives containing adamantyl ester groups for electron beam lithography
    Yamamoto, Hiroki
    Tagawa, Seiichi
    Kozawa, Takahiro
    Kudo, Hiroto
    Okamoto, Kazumasa
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (04):
  • [29] Effects of impurities on processes of acid generation in chemically amplified resists for electron beam and X-ray lithography
    Kozawa, Takahiro, 1600, (32):
  • [30] Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process
    Yang, Haifang
    Jin, Aizi
    Luo, Qiang
    Li, Junjie
    Gu, Changzhi
    Cui, Zheng
    MICROELECTRONIC ENGINEERING, 2008, 85 (5-6) : 814 - 817
12345