Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy

被引：0

作者：

Senez, Vincent ^{[1
,7
]}

Armigliato, Aldo ^{[2
]}

De Wolf, Ingrid ^{[3
]}

Carnevale, Gianpietro ^{[4
]}

Balboni, Roberte ^{[2
]}

Frabboni, Stefano ^{[5
]}

Benedett, Alessandro ^{[3
,6
]}

机构：

[1] IEMN-ISEN, UMR CNRS-8520, Avenue Poincaré, 59652 Villeneuve d'Ascq Cédex, France

[2] CNR-IMM, Sezione di Bologna, Via P. Gobetti 101, 40129 Bologna, Italy

[3] IMECvzw, Kalpeldreef 75, 3001 Leuven, Belgium

[4] STMicroelectronics, via C. Olivetti 2, 20041 Agrate Brianza, Italy

[5] INFM, National Research Centre-S3, Univ. di Modern e Reggio Emilia, via G. Campi 213/A, 41100 Modena, Italy

[6] Department of Electronic Engineering, University of Sheffield, Mappin Street, S13JD Sheffield, United Kingdom

[7] LIMMS/CNRS-IIS, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

来源：

Journal of Applied Physics | 2003年 / 94卷 / 09期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

(Edited Abstract)

引用

页码：5574 / 5583

共 43 条

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[23] Characterization of graphite alteration in an uranium deposit by micro-Raman spectroscopy, X-ray diffraction, transmission electron microscopy and scanning electron microscopy
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[26] Using a <670> zone axis for convergent beam electron diffraction measurements of lattice strain in strained silicon
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[30] Lattice strain and static disorder determination in Si/Si1-xGex/Si heterostructures by convergent beam electron diffraction
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