FORMATION OF DEFECTS IN GERMANIUM AT ELEVATED IRRADIATION TEMPERATURES.

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作者：
Bolotov, V.V.
Vasil'ev, A.V.
Kashnikov, B.P.
Smagulova, S.A.
Smirnov, L.S.
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Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1976年 / 10卷 / 01期
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摘要：
An investigation was made of changes in the carrier density (n) and nonequilibrium carrier lifetime ( tau ) in n- and p-type germanium as a result of irradiation with 3. 5 MeV electrons at temperatures T(irr) equals 20-300 degree C followed by annealing up to T(ann) equals 500 degree C. The nature of the annealing effects depended strongly on the irradiation temperature. The values of n and tau could be varied within a wide range (in particular, the value of tau could be increased compared with the lifetime in the unirradiated material) by altering the temperatures T(irr) and T(ann). The range of T(irr) in which the most stable effects were generated was determined.
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