X-RAY DIFFRACTION INTENSITY RATIO METHOD FOR THE THICKNESS MEASUREMENT OF TERNARY, HETEROGENEOUS EPITAXIAL LAYERS ON A GaAs SUBSTRATE.

被引：0
|
作者：
Yang Chuanzheng
机构：
来源：
| 1983年 / 04期
关键词：
ARSENIC COMPOUNDS - CRYSTALS - Epitaxial Growth - GALLIUM COMPOUNDS - X-RAY ANALYSIS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
On the basis of symmetric Bragg reflection, dynamic diffraction, and kinematic absorption, equations of each layer's thickness connected with the intensity ratios of certain X-ray diffraction lines have been derived for systems with multi-epitaxial layers on GaAs sustrates. The values of the intensity ratio are measured experimentally by X-ray diffraction. Consequently, the thicknesses of various epitaxial layers can be determined. The measured results of kinematic absorption agree fairly well with those of the cleavage method. Finally, the effect of various factors on the measured results is discussed briefly.
引用
收藏
相关论文
共 50 条
  • [41] A measurement method of x-ray intensity with the gm counter
    Ohlin, P
    PHYSIKALISCHE ZEITSCHRIFT, 1938, 39 : 567 - 571
  • [42] Stress measurement by X-ray diffraction method for electrodeposited SnCu coating on alloy 42 substrate
    Kato, Takahiko
    Akahoshi, Haruo
    Nakamura, Masato
    Hashimoto, Tomoaki
    Nishimura, Asao
    58TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, PROCEEDINGS, 2008, : 1491 - +
  • [43] Investigation of epitaxial layers ZnTe on substrates GaAs (310) by the methods of ellipsometry and the method of x-ray photoelectronic spectroscopy
    Yakushev, M.V.
    Shvets, V.A.
    Kesler, V.G.
    Sidorov, Yu.G.
    Avtometriya, 2001, (03): : 30 - 38
  • [44] X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate
    Qu, B
    Zheng, XH
    Wang, YT
    Feng, ZH
    Liu, SA
    Lin, SM
    Yang, H
    Liang, JW
    THIN SOLID FILMS, 2001, 392 (01) : 29 - 33
  • [45] Influence of Transited Layer of Multilayer on X-ray Diffraction Intensity and Calculation of the Thickness
    FENG Shimeng
    YI Kui
    ZHAO Qiang
    TANG Zaosen
    FAN Zhengxiou (Shanghai Institute of Optics and Fine Mechanics
    ChineseJournalofLasers, 2000, (02) : 134 - 139
  • [46] High-resolution X-ray diffraction analysis and reflectivity of epitaxial thin layers
    Baulès, P
    Casanove, MJ
    Roucau, C
    Ousset, JC
    Bobo, JF
    Snoeck, E
    Magnoux, D
    Gatel, C
    JOURNAL DE PHYSIQUE IV, 2002, 12 (PR6): : 247 - 253
  • [47] X-ray diffraction determination of the degree of ordering of a solid solution in epitaxial AlGaN layers
    R. N. Kyutt
    S. V. Ivanov
    Physics of the Solid State, 2014, 56 : 2390 - 2392
  • [48] X-Ray Diffraction Determination of the Degree of Ordering of a Solid Solution in Epitaxial AlGaN Layers
    Kyutt, R. N.
    Ivanov, S. V.
    PHYSICS OF THE SOLID STATE, 2014, 56 (12) : 2390 - 2392
  • [49] High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films
    Singh, D.
    Kumar, R.
    Ganguli, T.
    Major, S. S.
    MATERIALS RESEARCH EXPRESS, 2017, 4 (09):
  • [50] ON THE METHOD OF X-RAY MEASUREMENT OF MACROSTRESS AND MICROSTRESS BY THE METHOD OF DIFFRACTION PHOTOGRAPHS
    VASILIEV, DM
    INDUSTRIAL LABORATORY, 1959, 25 (01): : 72 - 78
12345