STUDIES OF SURFACE CONDUCTION MECHANISM IN SILICON COVERED BY ULTRA-THIN OXIDE LAYER.

被引：0
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作者：
Ruzyllo, Jerzy
Jakubowski, Andrzej
Swit, Alfred
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来源：
| 1978年 / 26卷 / 06期
关键词：
OXIDE LAYERS;
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摘要：
The mechanism of surface conduction in silicon covered by ultra-thin oxide layer was found to be of complex form different from the same mechanism in both, bare silicon and silicon covered by oxide layer thicker than 500 A. In the present work this mechanism is studied in detail, and the explanation of the observed effects is proposed.
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页码：593 / 600
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