Characterisation of degradation mechanisms in resonant tunnelling diodes

被引：0
|
作者：
Vogt, A. [1 ]
Brandt, M. [1 ]
Sigurdardottir, A. [1 ]
Schussler, M. [1 ]
Pena, D. [1 ]
Simon, A. [1 ]
Hartnagel, H.L. [1 ]
Rodewald, M. [1 ]
Roesner, M. [1 ]
Fuess, H. [1 ]
Goswami, S.N.N. [1 ]
Lal, K. [1 ]
机构：
[1] TH Darmstadt, Darmstadt, Germany
来源：
Microelectronics Reliability | 1997年 / 37卷 / 10-11期
关键词：
Number:; -; Acronym:; EC; Sponsor: European Commission;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1691 / 1694
相关论文
共 50 条
  • [21] Experimental threshold logic implementations based on resonant tunnelling diodes
    Prost, W
    Kim, SO
    Glösekötter, P
    Pacha, C
    van Husen, H
    Reimann, T
    Goser, KF
    Tegude, FJ
    ICES 2002: 9TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-111, CONFERENCE PROCEEDINGS, 2002, : 669 - 672
  • [22] n-type Si/SiGe resonant tunnelling diodes
    Paul, DJ
    See, P
    Zozoulenko, IV
    Berggren, KF
    Holländer, B
    Mantl, S
    Griffin, N
    Coonan, BP
    Redmond, G
    Crean, GM
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 26 - 29
  • [23] Millimeter-wave detection using resonant tunnelling diodes
    Mehdi, I., 1600, (03):
  • [24] Resonant tunnelling diodes operating as modern quantum transport devices
    Förster, A
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 966 - 973
  • [25] Study on opto-electronic integration of resonant tunnelling diodes
    Niu Ping-juan
    Hu Hai-rong
    Liu Hong-wei
    Wang Wen-xin
    Shang Xun-Zhong
    NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2, 2007, 121-123 : 533 - 535
  • [26] Resonance and current instabilities in AlN/GaN resonant tunnelling diodes
    Belyaev, AE
    Makarovsky, O
    Walker, DJ
    Eaves, L
    Foxon, CT
    Novikov, SV
    Zhao, LX
    Dykeman, RI
    Danylyuk, SV
    Vitusevich, SA
    Kappers, MJ
    Barnard, JS
    Humphreys, CJ
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 752 - 755
  • [27] Unconditionally stable high current density resonant tunnelling diodes
    Dupuis, O
    Pesant, JC
    Mounaix, P
    Mollot, F
    Vanbésien, O
    Lippens, D
    TERAHERTZ SPECTROSCOPY AND APPLICATIONS 11, 1999, 3828 : 326 - 334
  • [28] 4 LOGIC STATES USING 2 RESONANT TUNNELLING DIODES
    VANHOOF, C
    GENOE, J
    VANHOVE, M
    VANROSSUM, M
    MERTENS, R
    BORGHS, G
    ELECTRONICS LETTERS, 1989, 25 (04) : 259 - 260
  • [29] Resonant tunnelling diodes based on twisted black phosphorus homostructures
    Pawan Kumar Srivastava
    Yasir Hassan
    Duarte J. P. de Sousa
    Yisehak Gebredingle
    Minwoong Joe
    Fida Ali
    Yang Zheng
    Won Jong Yoo
    Subhasis Ghosh
    James T. Teherani
    Budhi Singh
    Tony Low
    Changgu Lee
    Nature Electronics, 2021, 4 : 269 - 276
  • [30] Nanoelectronic pulse generators based on gated resonant tunnelling diodes
    Wernersson, LE
    Lindström, P
    Nauen, A
    Lind, E
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2004, 32 (05) : 431 - 437
12345