IMAGING STATEGY IN THE SCANNING ELECTRON MICROSCOPE.

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Newbury, D.E.

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Scanning Electron Microscopy | 1981年

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页码：71 / 78

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[31] CONCERNING THE FORMATION OF IMAGES OF DEEP HOLES IN A SCANNING ELECTRON MICROSCOPE.
Gorodskii, D.D.
Zadorozhnyi, S.S.
Luk'yanov, A.E.
Rau, E.I.
Spivak, G.V.
Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizika), 1975, 30 (04): : 32 - 36
[32] QUANTITATIVE COMPOSITION ANALYSIS USING THE BACKSCATTERED ELECTRON SIGNAL IN A SCANNING ELECTRON MICROSCOPE.
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Scanning Electron Microscopy, 1984, v : 483 - 492
[33] OBTAINING EQUIPOTENTIAL PATTERNS WITH INCREASED ACCURACY ON A SCANNING ELECTRON MICROSCOPE.
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Kolomeitsev, M.I.
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Instruments and Experimental Techniques (English Translation of Pribory I Tekhnika Eksperimenta), 1979, 22 (2 pt 2): : 572 - 575
[34] FUNCTION TESTING OF SEMICONDUCTOR DEVICES WITH THE STROBOSCOPIC SCANNING ELECTRON MICROSCOPE.
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[35] On the theory of the electron microscope.
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ZEITSCHRIFT FUR PHYSIK, 1933, 80 (11-12): : 813 - 818
[36] Theory of the electron microscope.
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ZEITSCHRIFT FUR PHYSIK, 1933, 83 (1-2): : 104 - 122
[37] LOW ACCELERATING VOLTAGE INSPECTION AND LINEWIDTH MEASUREMENT IN THE SCANNING ELECTRON MICROSCOPE.
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Scanning Electron Microscopy, 1984, v (pt 3 1984) : 1065 - 1074
[38] EXAMINATION OF DEVICE DEPLETION LAYER MOVEMENT USING THE SCANNING ELECTRON MICROSCOPE.
Ranasinghe, D.W.
Cross, A.C.
Nuclear Instruments and Methods, 1980, : 501 - 511
[39] OBSERVATION OF FRACTURE SURFACES OF TRC TEST SPECIMENS WITH SCANNING ELECTRON MICROSCOPE.
Masumoto, Isao
Terai, Kiyoshi
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Kutsuna, Muneharu
1600, (05):
[40] STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SILICON WAFERS WITH THE SCANNING ELECTRON MICROSCOPE.
Karelin, N.M.
Dusakin, S.I.
Litvinov, Yu.M.
Rau, E.I.
Spivak, G.V.
Soviet Microelectronics (English Translation of Mikroelektronika), 1980, 9 (01): : 26 - 30

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