HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON.

被引：0
|
作者：
Skorupa, W. [1 ]
Wieser, E. [1 ]
Groetzschel, R. [1 ]
Posselt, M. [1 ]
Buecke, H. [1 ]
Armigliato, A. [1 ]
Garulli, A. [1 ]
Beyer, A. [1 ]
Markgraf, W. [1 ]
机构：
[1] AdW of GDR, Dresden, East Ger, AdW of GDR, Dresden, East Ger
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B19-20卷
关键词：
BRANDT-KITAGAWA THEORY - DEPTH DISTRIBUTION - PHOSPHORUS IMPLANTATION - TRIM CODE;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：335 / 339
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