Investigation into the film growth of AlN on SiC by Low Pressure Chemical Vapour Deposition

被引：0

作者：

Williams, V. ^{[1
]}

Pernot, E. ^{[2
]}

Ramberg, E. ^{[1
]}

Blanquet, E. ^{[1
]}

Bluet, J.M. ^{[3
]}

Madar, R. ^{[2
]}

机构：

[1] LTPCM, UMR CNRS/INPG/UJF 5614, BP 75, FR-38402 Saint Martin d'Heres Cedex, France

[2] LMGP, UMR 5628 INPG/CNRS, BP 46, FR-38402 St. Martin d'Heres Cedex, France

[3] LETI-CEA Grenoble, 17 rue des Martyrs, FR-38054 Grenoble Cedex 9, France

来源：

Materials Science Forum | 2000年 / 338卷

关键词：

Annealing - Chemical vapor deposition - Composition effects - Epitaxial growth - Etching - High temperature effects - Ion implantation - Semiconducting aluminum compounds - Semiconducting silicon compounds - Semiconductor growth - Silicon carbide - Sublimation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Aluminum nitride layers were grown by Low Pressure Chemical Vapour Deposition on off-cut 6H-SiC and 4H-SiC substrates, implanted or with an epilayer. Samples were annealed at the temperature of 1600 °C or 1650 °C. Depending of annealing temperature and nature of the substrate, the AlN layers were partially removed and the SiC substrates etched. AlN layers and SiC surfaces were characterized by X-ray diffraction and Scanning Electron Microscopy before and after annealing.

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