Characterization of gas-source molecular beam epitaxial growth of strain-compensated Si1-x-yGexCy/Si(0 0 1) heterostructure

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作者：
Akane, T. [1 ]
Sano, M. [1 ]
Okumura, H. [1 ]
Tubo, Y. [1 ]
Ishikawa, T. [1 ]
Matsumoto, S. [1 ]
机构：
[1] Department of Electrical Engineering, Fac. Sci. Technol., Keio U., Yokohama 223, Japan
来源：
Journal of Crystal Growth | 1999年 / 203卷 / 01期
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页码：80 / 86
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