Monte Carlo simulation of hot-electron-induced dielectric breakdown in thin silicon dioxide films

被引：0
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作者：
Kamakura, Yoshinari [1 ]
Ishida, Akihiro [1 ]
Taniguchi, Kenji [1 ]
机构：
[1] Dept. of Electronics and Info. Syst., Osaka Univ., 2-1 Yamada-oka, S., Osaka, Japan
来源：
Physica B: Condensed Matter | 1999年 / 272卷 / 01期
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页码：532 / 534
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