SEMICONDUCTOR DEVICES FOR SUPER HIGH FREQUENCIES.

被引：0

作者：

Motoya, Kaoru ^{[1
]}

机构：

[1] Semiconductor Research Inst, Sendai, Jpn, Semiconductor Research Inst, Sendai, Jpn

来源：

Denshi Tokyo | 1984年 / 23期

关键词：

SEMICONDUCTOR DIODES - TRANSISTORS; BIPOLAR;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

This paper describes how semiconductor devices have established the stable position for super high frequency application. It describes the main historical achievements of semiconductor devices studied by our group from 1948 until now. The main results obtained are the SIT (Static Induction Transistor), the TUNNETT (tunnel injection transit time) diode and the semiconductor injection laser.

引用

页码：132 / 138

共 50 条

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