Hydrogen passivation in nitrogen and chlorine-doped ZnSe films grown by gas source molecular beam epitaxy

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 9卷 / 1062期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] GaAs surface passivation with GaS thin film grown by molecular beam epitaxy
    Okamoto, Naoya
    Tanaka, Hitoshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (02): : 484 - 485
  • [42] Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation
    Okamoto, N
    Tanaka, H
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 1999, 2 (01) : 13 - 18
  • [43] GaAs surface passivation with GaS thin film grown by molecular beam epitaxy
    Okamoto, N
    Tanaka, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (02): : 484 - 485
  • [44] Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers
    Wang, SZ
    Xie, SW
    Pang, QJ
    Zheng, H
    Xia, YX
    Ji, RB
    Wu, Y
    He, L
    Zhu, ZM
    Li, GH
    Wang, ZP
    JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) : 548 - 553
  • [45] Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy
    Shih, DK
    Lin, HH
    Song, LW
    Chu, TY
    Yang, TR
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 555 - 558
  • [46] Electrical properties of chlorine-doped ZnO thin films grown by MOCVD
    Chikoidze, E.
    Modreanu, M.
    Sallet, V.
    Gorochov, O.
    Galtier, P.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (07): : 1575 - 1579
  • [47] Diffusion of Pt in molecular beam epitaxy grown ZnSe
    Slotte, J
    Salonen, R
    Ahlgren, T
    Raisanen, J
    Rauhala, E
    Uusimaa, P
    APPLIED PHYSICS LETTERS, 1998, 72 (20) : 2553 - 2555
  • [48] MnS/ZnSe on GaAs grown by molecular beam epitaxy
    Sivananthan, S
    Wang, L
    Sporken, R
    Chen, J
    Skromme, BJ
    Smith, DJ
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 94 - 98
  • [49] CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    YAO, T
    JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 31 - 40
  • [50] Molecular beam epitaxy-grown ZnSe nanowires
    Chan, S. K.
    Liu, N.
    Cai, Y.
    Wang, N.
    Wong, G. K. L.
    Sou, I. K.
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (06) : 1246 - 1250
12345