INVESTIGATION OF THE EFFECT OF NONLINEAR PHYSICAL PHENOMENA ON CHARGE CARRIER TRANSPORT IN SEMICONDUCTOR DEVICES.

被引：0
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作者：
Mnatsakanov, T.T. [1 ]
Rostovtsev, I.L. [1 ]
Philatov, N.I. [1 ]
机构：
[1] V. I. Lenin All Union, Electrotechnical Inst, Moscow, USSR, V. I. Lenin All Union Electrotechnical Inst, Moscow, USSR
来源：
| 1600年 / 30期
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摘要：
SEMICONDUCTOR MATERIALS
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