CMOS DEVICES ISOLATED BY AN IMPLANTED SILICON NITRIDE LAYER.

被引：0
|
作者：
Liu Zhongli
Zetzmann, W.
Neubert, E.
Zimmer, G.
机构：
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1983年 / 4卷 / 06期
关键词：
SEMICONDUCTOR DEVICES; MOS; -; Performance;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Complementary Metal Oxide Semiconductor (CMOS) device fabricated in the silicon wafer isolated by an implanted silicon nitride layer is described. The process description, together with the characteristics of CMOS transistors and inverter, is given. Future prospect of the technology is also discussed.
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页码：601 / 605
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