GaInN/GaN heterostructures grown in production scale MOVPE reactors

被引：0
|
作者：
Schoen, O. [1 ]
Protzmann, H. [1 ]
Rockenfeller, O. [2 ]
Schineller, B. [2 ]
Heuken, M. [2 ]
Juergensen, H. [1 ]
机构：
[1] AIXTRON AG, Kackerstr. 15-17, 52072 Aachen, Germany
[2] Institut fuer Halbleitertechnik, RWTH Aachen, Templergraben 55, 52056 Aachen, Germany
来源：
Journal De Physique. IV : JP | 1999年 / 9 pt 2卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：8 / 1035
相关论文
共 50 条
  • [41] Structural properties of GaN grown by MOVPE turbodisc mass-production reactor
    Emcore Corp, Somerset, United States
    J Cryst Growth, 1-4 (647-652):
  • [42] Influence of UV light-assisted annealing on optical properties of InGaN/GaN heterostructures grown by MOVPE
    Marko, IP
    Lutsenko, EV
    Pavlovskii, VN
    Yablonskii, GP
    Schön, O
    Protzmann, H
    Lünenburger, M
    Heuken, M
    Schineller, B
    Heime, K
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 216 (01): : 175 - 179
  • [43] In situ SiN passivation of AlInN/GaN heterostructures by MOVPE
    Behmenburg, H.
    Khoshroo, L. Rahimzadeh
    Mauder, C.
    Ketteniss, N.
    Lee, K. H.
    Eickelkamp, M.
    Brast, M.
    Fahle, D.
    Woitok, J. F.
    Vescan, A.
    Kalisch, H.
    Heuken, M.
    Jansen, R. H.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
  • [44] MOVPE growth of n-GaN cap layer on GaInN/GaN multi -quantum shell LEDs
    Goto, Nanami
    Sone, Naoki
    Iida, Kazuyoshi
    Lu, Weifang
    Suzuki, Atsushi
    Murakami, Hideki
    Terazawa, Mizuki
    Ohya, Masaki
    Kamiyama, Satoshi
    Takeuchi, Tetsuya
    Iwaya, Motoaki
    Akasaki, Isamu
    JOURNAL OF CRYSTAL GROWTH, 2020, 539
  • [45] InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies
    Mukhtarova, Anna
    Valdueza-Felip, Sirona
    Durand, Christophe
    Pan, Qing
    Grenet, Louis
    Peyrade, David
    Bougerol, Catherine
    Chikhaoui, Walf
    Monroy, Eva
    Eymery, Joel
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, 2013, 10 (03): : 350 - 354
  • [46] GaN:Co epitaxial layers grown by MOVPE
    Simek, P.
    Sedmidubsky, D.
    Klimova, K.
    Mikulics, M.
    Marysko, M.
    Vesely, M.
    Jurek, K.
    Sofer, Z.
    JOURNAL OF CRYSTAL GROWTH, 2015, 414 : 62 - 68
  • [47] In situ monitoring of GaN growth in multiwafer MOVPE reactors
    Lünenbürger, M
    Protzmann, H
    Heuken, M
    Jürgensen, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 727 - 731
  • [48] Mn DOPING OF GaN LAYERS GROWN BY MOVPE
    Simek, Petr
    Sofer, Zdenek
    Sedmidubsky, David
    Jankovsky, Ondrej
    Hejtmanek, Jiri
    Marysko, Miroslav
    Vaclavu, Michal
    Mikulics, Martin
    CERAMICS-SILIKATY, 2012, 56 (02) : 122 - 126
  • [49] Optical studies of MOVPE grown GaN layers
    Ciorga, M
    Jezierski, K
    Bryja, L
    Misiewicz, J
    Paszkiewicz, R
    Korbutowicz, R
    Panek, M
    Paszkiewicz, B
    Tlaczala, M
    Trabjerg, I
    EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 178 - 181
  • [50] Magnesium diffusion profile in GaN grown by MOVPE
    Benzarti, Z.
    Halidou, I.
    Bougrioua, Z.
    Boufaden, T.
    El Jani, B.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (14) : 3274 - 3277
12345