GaInN/GaN heterostructures grown in production scale MOVPE reactors

被引：0
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作者：
Schoen, O. [1 ]
Protzmann, H. [1 ]
Rockenfeller, O. [2 ]
Schineller, B. [2 ]
Heuken, M. [2 ]
Juergensen, H. [1 ]
机构：
[1] AIXTRON AG, Kackerstr. 15-17, 52072 Aachen, Germany
[2] Institut fuer Halbleitertechnik, RWTH Aachen, Templergraben 55, 52056 Aachen, Germany
来源：
Journal De Physique. IV : JP | 1999年 / 9 pt 2卷 / 08期
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页码：8 / 1035
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