Negative magnetoresistance and localized magnetic states in semiconductors

A simple model is used to explain the appearance of negative magnetoresistance in semiconductors doped with nonmagnetic impurities. There is also a report of an experimental investigation of the negative magnetoresistance of n- type germanium doped with various impurities. A comparison of the theory with the experimental results yielded- the dependence of the amplitude of the negative magnetoresistance on the impurity concentration; the value of the localized magnetic moment and its dependence on the magnetic field, observed in samples with high impurity concentrations.