Thermal stress characteristics of Cu/oxide and Cu/low-k submicron interconnect structures

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机构：
[1] [1,Rhee, Seung-Hyun
[2] Du, Yong
[3] Ho, Paul S.
来源：
Rhee, S.-H. (seung-hyun.rhee@amd.com) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Aspect ratio - Copper - Dielectric materials - Finite element method - Passivation - Thermal stress - X ray diffraction analysis;
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摘要：
Thermal stress characteristics of damascene Cu interconnects passivated with tetraethyl orthosilicate (TEOS) and methyl silsesquioxane (MSQ) low-k were investigated. All Cu interconnects exhibited almost purely elastic behaviors within temperature range studied. Thermal stress characteristics of TEOS passivated Cu lines were similar to those reported previously for Al(Cu) lines, where the lines showed high triaxial stress levels after cool down.
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