Contribution to current transient analysis including space-charge build-up and dipolar relaxation

被引：0

|

作者：

机构：

[1] Ongaro, R.

来源：

Ongaro, R. | 1600年 / 137期

关键词：

Boltzmann-Hopkinson Principle - Dielectric Relaxation - Dipolar Relaxation - Space-Charge Build-Up;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 46 条

[41] MEASUREMENT OF SPACE-CHARGE GENERATION-RECOMBINATION CURRENT IN HG1-XCDXTE PHOTO-DIODES BY DEEP LEVEL TRANSIENT SPECTROSCOPY
POLLA, DL
REINE, MB
SOOD, AK
LOVECCHIO, P
JONES, CE
SCOTT, MW
SOLID-STATE ELECTRONICS, 1981, 24 (08) : 719 - 723
[42] Relaxation of the electron energy distribution function in the afterglow of a N2 microwave discharge including space-charge field effects -: art. no. 046404
Guerra, V
Sá, PA
Loureiro, J
PHYSICAL REVIEW E, 2001, 63 (04):
[43] MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS
FISCHETTI, MV
LAUX, SE
PHYSICAL REVIEW B, 1988, 38 (14) : 9721 - 9745
[44] Comparison of simulations to experiment for a detailed analysis of space-charge-limited transient current measurements in organic semiconductors
Szymanski, Marek Z.
Kulszewicz-Bajer, Irena
Faure-Vincent, Jerome
Djurado, David
PHYSICAL REVIEW B, 2012, 85 (19)
[45] MONTE-CARLO ANALYSIS OF THE SPACE-CHARGE EFFECT IN ALGAAS/GAAS BALLISTIC COLLECTION TRANSISTORS (BCTS) UNDER HIGH-CURRENT INJECTION
NAKAJIMA, H
TOMIZAWA, M
ISHIBASHI, T
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (07) : 1558 - 1563
[46] Two methods for determining the activation energy of deep levels from an analysis of the recombination current in the space-charge region of a p-n junction
Bulyarskii, SV
Grushko, NS
Lakalin, AV
INDUSTRIAL LABORATORY, 1997, 63 (07): : 408 - 413

← 1 2 3 4 5 →