EFFECTIVE LIFETIME IN n-TYPE GERMANIUM IRRADIATED WITH 660 Mev PROTONS.

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Pokotilo, Yu.M.
Tkachev, V.D.
Yavid, V.Yu.
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Soviet physics. Semiconductors | 1980年 / 14卷 / 11期
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摘要：
An investigation was made of the effects of temperature and dose on the lifetime tau of the minority carriers in n-type germanium irradiated with 660 Mev protons. The value of tau was found to be governed by point defects and their clusters. A solution of the equation of continuity yielded an expression for the effective lifetime indicating that the rates of recombination at point defects and clusters were additive, and that their relative contributions depended on the radiation dose. It was established that the dimensions of defect clusters depended on the concentration of the main dopant.
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页码：1317 / 1319
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