INVERSION-LAYER CAPACITANCE AND MOBILITY OF VERY THIN GATE-OXIDE MOSFET'S.

被引：0

作者：

Liang, Mong-Song ^{[1
]}

Choi, Jeong Yeol ^{[1
]}

Ko, Ping-Keung ^{[1
]}

Hu, Chenming ^{[1
]}

机构：

[1] Univ of California, Berkeley, CA,, USA, Univ of California, Berkeley, CA, USA

来源：

IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 03期

关键词：

ELECTRIC MEASUREMENTS - Capacitance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Inversion-layer capacitance has been experimentally characterized and identified to be the main cause of the second-order thickness-dependence of MOSFET characteristics. Field-dependent channel mobilities of both electrons and holes were independent of gate-oxide thickness from 50 to 450 angstrom; e. g. , there is no evidence of the alleged mobility degradation in very thin gate-oxide MOSFETs. Subthreshold slope, insignificantly affected by the inversion-layer capacitance, follows the simple theory down to 35 angstrom of oxide thickness. Empirical equations for inversion-layer capacitance and mobilities versus electric field are proposed.

引用

页码：409 / 413

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