Strain compensation in highly carbon doped GaAs/AlAs distributed Bragg reflectors

被引：0
|
作者：
Mazuelas, A. [1 ]
Hey, R. [1 ]
Wassermeier, M. [1 ]
Grahn, H.T. [1 ]
机构：
[1] Paul-Drude-Inst fuer, Festkoerperelektronik, Berlin, Germany
来源：
Journal of Crystal Growth | 1997年 / 175-176卷 / pt 1期
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页码：383 / 386
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