Deposition of μc-Si and μc-Si-C thin films by remote plasma-enhanced chemical-vapor deposition

被引：0

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机构：

[1] Lucovsky, G.

[2] Wang, Cheng

[3] Nemanich, R.J.

[4] Williams, M.J.

来源：

Lucovsky, G. | 1600年 / 30期

关键词：

Doped Thin Film Characteristics - Microcrystalline Silicon-Carbon - Remote Plasma-Enhanced Chemical Vapor Deposition (PECVD);

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