DEPOSITION OF MU-C-SI AND MU-C-SI-C THIN-FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION

被引：11
|
作者：
LUCOVSKY, G [1 ]
WANG, C [1 ]
NEMANICH, RJ [1 ]
WILLIAMS, MJ [1 ]
机构：
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
来源：
SOLAR CELLS | 1991年 / 30卷 / 1-4期
关键词：
D O I：
10.1016/0379-6787(91)90075-Z
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper describes properties of microcrystalline silicon (mu-c-Si), and microcrystalline silicon-carbon (mu-c-Si-C) thin films formed by the process of remote plasma-enhanced chemical-vapor deposition (PECVD). We discuss: (i) the way that the remote PECVD deposition process is applied to the deposition of mu-c-Si and mu-c-Si-C thin films; (ii) the characterization and properties of the intrinsic and doped mu-c-Si thin film materials; (iii) the characterization and properties of the intrinsic and doped mu-c-Si-C thin film materials; and (iv) the application of remote PECVD mu-c-Si and mu-c-Si-C thin films in device structures.
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页码：419 / 434
页数：16
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