Structure investigation on Hg1-xCdxTe liquid phase epitaxial films grown by the meltetch technique

被引:0
|
作者
Chinese Acad of Sciences, Shanghai, China [1 ]
机构
来源
J Electron Mater | / 2卷 / 51-54期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] TRANSPORT-PROPERTIES OF LIQUID-PHASE EPITAXIAL HG1-XCDXTE N/P STRUCTURES
    KOPPEL, P
    OWENS, K
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) : 6886 - 6898
  • [42] THE BEHAVIOR OF DOPED HG1-XCDXTE EPITAXIAL LAYERS GROWN FROM HG-RICH MELTS
    KALISHER, MH
    JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 365 - 372
  • [43] Structural properties of CdTe and Hg1-xCdxTe epitaxial layers grown on sapphire substrates
    Sochinskii, NV
    Soares, JC
    Alves, E
    daSilva, MF
    Franzosi, P
    Bernardi, S
    Dieguez, E
    JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) : 195 - 200
  • [44] ISOTHERMAL GROWTH OF HG1-XCDXTE FILMS
    MONCHAMP, R
    DEVANEY, C
    MILES, J
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 409 : 9 - 11
  • [45] ANODIC SULFIDE FILMS ON HG1-XCDXTE
    NEMIROVSKY, Y
    BURSTEIN, L
    APPLIED PHYSICS LETTERS, 1984, 44 (04) : 443 - 444
  • [46] NEW DEVELOPMENTS IN THE LIQUID-PHASE EPITAXY OF HG1-XCDXTE
    BERNARDI, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 21 - 28
  • [47] Investigation and characterization of Hg1-xCdxTe epilayers
    Tsybriik-Ivasiv, ZF
    Darchuk-Korovina, LO
    Sizov, FF
    Golenkov, OG
    Bilevych, YO
    Sidorov, YG
    Varavin, VS
    JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 382 (1-2) : 288 - 291
  • [48] Thermal annealing studies of undoped Hg1-xCdxTe epilayers grown by Hg-rich liquid phase epitaxy
    Chavada, FR
    Garg, AK
    Kumar, S
    Nagpal, A
    Sharma, S
    Gupta, SC
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 61 - 63
  • [49] New developments in the liquid-phase epitaxy of Hg1-xCdxTe
    Bernardi, Sergio
    Materials science & engineering. B, Solid-state materials for advanced technology, 1994, B28 (1-3): : 21 - 28
  • [50] Arsenic incorporation in MBE grown Hg1-xCdxTe
    Grein, CH
    Garland, JW
    Sivananthan, S
    Wijewarnasuriya, PS
    Aqariden, F
    Fuchs, M
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (06) : 789 - 792