On the role of chlorine in selective silicon epitaxy by chemical vapor deposition

被引:0
|
作者
North Carolina State Univ, Raleigh, United States [1 ]
机构
来源
J Electrochem Soc | / 10卷 / 3290-3296期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Lowest Concentration of Chlorine Trifluoride Gas for Cleaning Silicon Carbide Chemical Vapor Deposition Reactor
    Takizawa, Yuika
    Hayashi, Masaya
    Habuka, Hitoshi
    Ishiguro, Akio
    Ishii, Shigeaki
    Watanabe, Toru
    Moriyama, Yoshikazu
    Daigo, Yoshiaki
    Mizushima, Ichiro
    Takahashi, Yoshinao
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 11 (08)
  • [32] Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
    Leone, Stefano
    Kordina, Olof
    Henry, Anne
    Nishizawa, Shin-ichi
    Danielsson, Orjan
    Janzen, Erik
    CRYSTAL GROWTH & DESIGN, 2012, 12 (04) : 1977 - 1984
  • [33] Selective rapid thermal chemical vapor deposition of titanium disilicide on silicon and polysilicon
    Nie, LX
    Weintraub, CE
    Ozturk, MC
    RAPID THERMAL AND INTEGRATED PROCESSING VI, 1997, 470 : 139 - 144
  • [34] Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon
    Wu, B
    Cohen, PI
    Feldman, LC
    Zhang, ZY
    APPLIED PHYSICS LETTERS, 2004, 84 (12) : 2175 - 2177
  • [35] Origin of area selective plasma enhanced chemical vapor deposition of microcrystalline silicon
    Akiki, Ghewa
    Fregnaux, Mathieu
    Florea, Ileana
    Bulkin, Pavel
    Daineka, Dmitri
    Filonovich, Sergej
    Bouttemy, Muriel
    Johnson, Erik, V
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (01):
  • [36] Fabrication of fine copper lines by selective chemical vapor deposition on silicon substrates
    Vidal, S
    Gleizes, A
    Davazoglou, D
    MICROELECTRONIC ENGINEERING, 2001, 55 (1-4) : 285 - 290
  • [37] Selective chemical vapor deposition of copper on AZ 5214™-patterned silicon substrates
    Davazoglou, D
    Vidal, S
    Gleizes, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (03): : 759 - 761
  • [38] Control of selective tungsten chemical vapor deposition by monolayer nitridation of silicon surface
    Takami, S
    Saito, T
    Fujii, M
    Egashira, Y
    Komiyama, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (02) : L38 - L40
  • [39] Aluminum-selective chemical vapor deposition induced by hydrogen desorption on silicon
    Sakaue, H
    Katsuda, Y
    Konagata, S
    Shingubara, S
    Takahagi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1010 - 1013
  • [40] THERMODYNAMIC MODELING OF SELECTIVE CHEMICAL VAPOR-DEPOSITION PROCESSES IN MICROELECTRONIC SILICON
    MADAR, R
    BERNARD, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 1413 - 1421