Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

被引：0

作者：

Dong, Jian-Rong ^{[1
]}

Teng, Jing-Hua ^{[1
]}

Chua, Soo-Jin ^{[1
]}

Foo, Boon-Chin ^{[1
]}

Wang, Yan-Jun ^{[1
]}

Zhang, Lian-Wen ^{[1
]}

Yuan, Hai-Rong ^{[1
]}

Yuan, Shu ^{[2
]}

机构：

[1] Inst. of Mat. Res. and Engineering, 3 Research Link, Singapore 117602, Singapore

[2] School of Materials Engineering, Nanyang Technological University, Singapore 639798, Singapore

来源：

Journal of Applied Physics | 2004年 / 95卷 / 09期

关键词：

Carrier concentration - Chemical vapor deposition - Ohmic contacts - Phosphorus - Photolithography - Photoluminescence - Quantum well lasers - Semiconducting gallium compounds - Thermal effects - Toxic materials - Vapor pressure - Waveguides - X ray diffraction analysis;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Metalorganic chemical vapor deposition (MOCVD) was used to grow strained AlGaInP/GaInP multiple-quantum-well (MQW) laser structures, using teriarybutylphosphine as the phosphorus precursor. Ridge waveguide lasers were also fabricated. Room temperature continuous-wave lasing was obtained with an emission wavelength. A single-facet output power was achieved for an as-cleaved laser chip. It was concluded that using less toxic metalorganic source teriarybutylphosphine with conventionally used toxic PH3, the fabrication of AlGaInP red lasers is possible.

引用

页码：5252 / 5254

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