INFLUENCE OF COMPENSATION DEGREE AND INJECTION LEVEL ON BANDTAIL-STRUCTURE IN HEAVILY DOPED SEMICONDUCTORS.

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作者：

Guo Changzhi

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来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1983年 / 4卷 / 01期

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页码：29 / 36

共 49 条

[1] PHOTOCONDUCTION IN HEAVILY DOPED COMPENSATED SEMICONDUCTORS.
Osipov, V.V.
Foigel', M.G.
Soviet physics. Semiconductors, 1982, 16 (11): : 1305 - 1308
[2] OPTICAL GAIN OF HEAVILY DOPED SEMICONDUCTORS.
Aleksanyan, A.G.
Poluektov, I.A.
Popov, Yu.M.
1600, (02):
[3] HOPPING CONDUCTION IN HEAVILY DOPED SEMICONDUCTORS.
Shklovskii, B.I.
1973, 7 (01): : 77 - 80
[4] THEORY OF THE LUMINESCENCE OF HEAVILY DOPED SEMICONDUCTORS.
Levanyuk, A.P.
Osipov, V.V.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (06): : 721 - 726
[5] THEORY OF THE LUMINESCENCE OF HEAVILY DOPED COMPENSATED NONDEGENERATE SEMICONDUCTORS.
Levanyuk, A.P.
Osipov, V.V.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (06): : 727 - 733
[6] INFLUENCE OF THE ELECTRON-PHONON SCATTERING ON THE SCATTERING OF PHONONS BY PHONONS IN HEAVILY DOPED SEMICONDUCTORS.
Korzhevykh, E.I.
1975, 17 (11): : 2174 - 2178
[7] INFLUENCE OF ELECTRICAL AND MAGNETIC FIELDS ON CHARGE TRANSPORT IN HEAVILY DOPED AND STRONGLY COMPENSATED SEMICONDUCTORS.
Zabrodskii, A.G.
Ionov, A.I.
Shlimak, I.S.
1600, (08):
[8] INTERACTION OF CARRIERS WITH CHARGED IMPURITIES IN HEAVILY DOPED FERROMAGNETIC SEMICONDUCTORS.
Grigin, A.P.
Nagaev, E.L.
Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1975, 17 (09): : 1740 - 1743
[9] CHARACTERISTICS OF THE ENERGY LOSS PROCESS FOR NONEQUILIBRIUM CARRIERS IN HEAVILY DOPED SEMICONDUCTORS.
Libenson, B.N.
Stuchinskii, G.B.
Soviet physics. Semiconductors, 1981, 15 (12): : 1381 - 1384
[10] DOUBLED INJECTION IN SEMICONDUCTORS HEAVILY DOPED WITH DEEP 2-LEVEL TRAPS
WEBER, WH
FORD, GW
SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1333 - &

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